PART |
Description |
Maker |
BB148T/R |
VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
KDV273 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
KDV258 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
KDV273UL |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND
|
KEC(Korea Electronics)
|
BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4 Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
BAT68-04W BAT68-05W BAT68-06W BAT68W |
Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SC4320 E000939 |
From old datasheet system VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|